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1

Growth of 6H and 4H silicon carbide single crystals by the modified Lely process utilizing a dual-seed crystal method

Heydemann, V. D., Schulze, N., Barrett, D. L., Pensl, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 443 KB

english, 1996

2

Oxidation of Silicon Carbide: Problems and Solutions

Afanas'ev, Valery V., Bassler, M., Pensl, Gerhard, Stesmans, Andre

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 522 KB

2002

3

Silicon Carbide (Volume 1: Growth, Defects, and Novel Applications) || Optical Properties of As-Grown and Process-Induced Stacking Faults in 4H-SiC

Friedrichs, Peter, Kimoto, Tsunenobu, Ley, Lothar, Pensl, Gerhard

Year:

2009

Language:

english

File:

PDF, 1.36 MB

english, 2009

4

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner, N. Nordell

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 419 KB

english, 1997

5

Implantation and annealing of aluminum in 4H silicon carbide

M. Rambach, F. Schmid, M. Krieger, L. Frey, A.J. Bauer, G. Pensl, H. Ryssel

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2005

Language:

english

File:

PDF, 229 KB

english, 2005

6

High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen

B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov, M. Noborio, T. Kimoto, V. V. Afanas'ev

Journal:

physica status solidi (a)

Year:

2009

Language:

english

File:

PDF, 1.70 MB

english, 2009

7

Near-equilibrium growth of micropipe-free 6H-SiC single crystals by physical vapor transport

Schulze, N., Barrett, D. L., Pensl, G.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 458 KB

english, 1998

8

[Advanced Texts in Physics] Silicon Carbide || Power MOSFETs in 4H-SiC: Device Design and Technology

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 768 KB

english, 2004

9

[Advanced Texts in Physics] Silicon Carbide || Surface Preparation Techniques for SiC Wafers

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 397 KB

english, 2004

10

[Advanced Texts in Physics] Silicon Carbide || Development of SiC Devices for Microwave and RF Power Amplifiers

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 653 KB

english, 2004

11

Sublimation growth of 4H- and 6H-SiC boule crystals

Heydemann, V.D., Schulze, N., Barrett, D.L., Pensl, G.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 619 KB

english, 1997

12

Radiation-induced defect centers in 4H silicon carbide

Dalibor, Thomas, Pensl, Gerhard, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Sridhara, Shankar, Devaty, Robert P., Choyke, Wolfgang J.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 593 KB

english, 1997

13

“Carbon cluster model” for electronic states at interfaces

Bassler, M., Pensl, G., Afanas'ev, V.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 438 KB

english, 1997

14

Impurity Conduction in Silicon Carbide

Krieger, Michael, Semmelroth, Kurt, Weber, Heiko B., Pensl, Gerhard, Rambach, Martin, Frey, Lothar

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 695 KB

english, 2007

15

Doping of SiC by Implantation of Boron and Aluminum

T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk, M. Maier

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 589 KB

english, 1997

16

Intrinsic SiC/SiO2 Interface States

V. V. Afanasev, M. Bassler, G. Pensl, M. Schulz

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 341 KB

english, 1997

17

Controlled Growth of 15R-SiC Single Crystals by the Modified Lely Method

N. Schulze, D. Barrett, G. Pensl

Journal:

physica status solidi (a)

Year:

2000

Language:

english

File:

PDF, 116 KB

english, 2000

18

Charge trapping and interface state generation in 6H-SiC MOS structures

V.V. Afanas'ev, M. Bassler, G. Pensl, M.J. Schulz

Journal:

Microelectronic Engineering

Year:

1995

Language:

english

File:

PDF, 353 KB

english, 1995

19

Diffusion of boron in silicon carbide

K. Rüschenschmidt, H. Bracht, M. Laube, N.A. Stolwijk, G. Pensl

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 142 KB

english, 2001

20

Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors

Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery Afanas'ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schöner

Journal:

physica status solidi (b)

Year:

2008

Language:

english

File:

PDF, 1.11 MB

english, 2008

21

Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts

Sergey A. Reshanov, Konstantin V. Emtsev, Florian Speck, Kun-Yuan Gao, Thomas K. Seyller, Gerhard Pensl, Lothar Ley

Journal:

physica status solidi (b)

Year:

2008

Language:

english

File:

PDF, 1.02 MB

english, 2008

22

Properties of the oxygen vacancy in ZnO

D.M. Hofmann, D. Pfisterer, J. Sann, B.K. Meyer, R. Tena-Zaera, V. Munoz-Sanjose, T. Frank, G. Pensl

Journal:

Applied Physics A: Materials Science & Processing

Year:

2007

Language:

english

File:

PDF, 377 KB

english, 2007

23

[Advanced Texts in Physics] Silicon Carbide Volume 314 || Zero- and Two-Dimensional Native Defects

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 863 KB

english, 2004

24

Management of Emergencies in Adults With Congenital Cardiac Disease

Harald Kaemmerer, Ulrike Bauer, Ulrike Pensl, Erwin Oechslin, Verena Gravenhorst, Andreas Franke, Alfred Hager, Gunter Balling, Michael Hauser, Andreas Eicken, John Hess

Journal:

The American Journal of Cardiology

Year:

2008

Language:

english

File:

PDF, 258 KB

english, 2008

25

[Advanced Texts in Physics] Silicon Carbide Volume 1277 || Characterization of Defects in SiC Crystals by Raman Scattering

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 586 KB

english, 2004

26

[Advanced Texts in Physics] Silicon Carbide || Epitaxial Growth and Device Processing of SiC on Non-Basal Planes

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 809 KB

english, 2004

27

[Advanced Texts in Physics] Silicon Carbide || High Nitrogen Doping During Bulk Growth of SiC

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 426 KB

english, 2004

28

[Advanced Texts in Physics] Silicon Carbide || Micromachining of SiC

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 471 KB

english, 2004

29

[Advanced Texts in Physics] Silicon Carbide || Ohmic Contacts for Power Devices on SiC

Choyke, W. J., Matsunami, H., Pensl, G.

Year:

2004

Language:

english

File:

PDF, 512 KB

english, 2004

30

Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning

Afanas’ev, V. V., Stesmans, A., Bassler, M., Pensl, G., Schulz, M. J., Harris, C. I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 277 KB

english, 1996

31

Band offsets and electronic structure of SiC/SiO2 interfaces

Afanas’ev, V. V., Bassler, M., Pensl, G., Schulz, M. J., Stein von Kamienski, E.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 316 KB

english, 1996

32

OBIC studies on 6H-SiC Schottky rectifiers with different surface pretreatments

Frischholz, Manfred, Rottner, Kurt, Schöner, Adolf, Dalibor, Thomas, Pensl, Gerhard

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 628 KB

english, 1997

33

Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC

Schmid, F., Laube, M., Pensl, G., Wagner, G., Maier, M.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 381 KB

english, 2002

34

Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC

K. Kawahara, J. Suda, G. Pensl, T. Kimoto

Year:

2010

Language:

english

File:

PDF, 699 KB

english, 2010

35

Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon

Götz, W., Pensl, G., Zulehner, W.

Journal:

Physical Review B

Year:

1992

Language:

english

File:

PDF, 183 KB

english, 1992

36

Nitrogen-carbon radiative defect at 0.746 eV in silicon

Dörnen, A., Pensl, G., Sauer, R.

Journal:

Physical Review B

Year:

1986

Language:

english

File:

PDF, 343 KB

english, 1986

37

Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy

Püsche, R., Hundhausen, M., Ley, L., Semmelroth, K., Schmid, F., Pensl, G., Nagasawa, H.

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 936 KB

english, 2004

38

Sb: A positron-annihilation study

Krause-Rehberg, R., Drost, Th., Polity, A., Roos, G., Pensl, G., Volm, D., Meyer, B. K., Bischopink, G., Benz, K. W.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 122 KB

english, 1993

39

Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC

Iwata, Hisaomi, Itoh, Kohei M., Pensl, Gerhard

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 379 KB

english, 2000

40

Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide

Schadt, M., Pensl, G., Devaty, R. P., Choyke, W. J., Stein, R., Stephani, D.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 277 KB

english, 1994

41

Set of five related photoluminescence defects in silicon formed through nitrogen-carbon interactions

Dörnen, A., Pensl, G., Sauer, R.

Journal:

Physical Review B

Year:

1987

Language:

english

File:

PDF, 226 KB

english, 1987

42

Hall Effects, DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAs

Roos, G., Schöner, Adolf, Pensl, Gerhard, Krambrock, K., Meyer, B.K., Spaeth, Johann Martin, Wagner, J.

Journal:

Materials Science Forum

Year:

1989

File:

PDF, 334 KB

1989

43

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length

Zippelius, Bernd, Hauck, Martin, Beljakowa, Svetlana, Weber, Heiko B., Krieger, Michael, Nagasawa, Hiroyuki, Uchida, Hidetsugu, Pensl, Gerhard, Schöner, Adolf

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 285 KB

english, 2012

44

Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Müller, Stephan G., Eckstein, Robert, Hartung, Wolfgang, Hofmann, Dieter, Kölbl, M., Pensl, Gerhard, Schmitt, Erwin, Weber, Arnd Dietrich, Winnacker, Albrecht

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 462 KB

1998

45

(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory

Pensl, Gerhard, Schmid, Frank, Reshanov, Sergey A., Weber, Heiko B., Bockstedte, M., Mattausch, Alexander, Pankratov, Oleg, Ohshima, Takeshi, Itoh, Hisayoshi

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 252 KB

english, 2007

46

Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC

Troffer, T., Pensl, Gerhard, Schöner, Adolf, Henry, Anne, Hallin, Christer, Kordina, Olle, Janzén, Erik

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 342 KB

1998

47

Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements

Dörnen, Achim, Sauer, R., Pensl, Gerhard

Journal:

Materials Science Forum

Year:

1989

File:

PDF, 407 KB

1989

48

SiC MATERIAL PROPERTIES

PENSL, GERHARD, CIOBANU, FLORIN, FRANK, THOMAS, KRIEGER, MICHAEL, RESHANOV, SERGEY, SCHMID, FRANK, WEIDNER, MICHAEL

Journal:

International Journal of High Speed Electronics and Systems

Year:

2005

Language:

english

File:

PDF, 2.01 MB

english, 2005

49

Ionization Energies of Phosphorus Donors in 6H-SiC

Schmid, Frank, Semmelroth, Kurt, Krieger, Michael, Weber, Heiko B., Pensl, Gerhard, Haller, Eugene E.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 565 KB

english, 2009

50

Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy

Püsche, Roland, Hundhausen, Martin, Ley, Lothar, Semmelroth, Kurt, Schmid, Frank, Pensl, Gerhard, Nagasawa, Hiroyuki

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 311 KB

english, 2004

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